Open AccessФормирование мелкодисперсного термоэлектрика Si-=SUB=-1-x-=/SUB=-Ge-=SUB=-x-=/SUB=- при электроимпульсном плазменном спекании
Author(s) -
М. В. Дорохин,
М. С. Болдин,
E. A. Uskova,
А.В. Боряков,
П. Б. Демина,
I. V. Erofeeva,
А. В. Здоровейщев,
В. Е. Котомина,
Ю.М. Кузнецов,
Е. А. Ланцев,
А. А. Попов,
В. Н. Трушин
Publication year - 2021
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/jtf.2021.12.51763.152-21
Subject(s) - sintering , materials science , crystallite , microstructure , diffusion , grain size , kinetics , particle (ecology) , particle size , nanostructure , phase (matter) , atmospheric temperature range , chemical engineering , crystallography , metallurgy , nanotechnology , thermodynamics , chemistry , physics , oceanography , organic chemistry , quantum mechanics , engineering , geology
The kinetics of diffusion processes occurring d0uring the formation of polycrystalline Si1-xGex nanostructures (x=0.20, 0.35) by electro-pulse plasma sintering in the temperature range 20-1200°C was studied for the first time. A mechanism for the formation of a solid solution of SiGe is proposed as a result of a comprehensive study of the microstructure and phase composition of samples with particle sizes from 150 nm to 100 μm, together with the analysis of experimental sintering maps. It is based on the phenomenon of mutual diffusion of Si and Ge atoms that occurs during the entire sintering process. For the selected sintering modes, the grain size of the formed SiGe corresponds to the size of the initial powder particles.