Open AccessИзменение характеристик полупроводниковых структур СВЧ-усилителей под воздействием импульсного лазерного излучения
Author(s) -
V. N. Pashentsev
Publication year - 2021
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/jtf.2021.11.51533.43-21
Subject(s) - materials science , optoelectronics , photocurrent , laser , amplifier , transistor , field effect transistor , semiconductor , radiation , schottky diode , optics , voltage , electrical engineering , physics , diode , cmos , engineering
The effect of pulsed laser radiation on the change in the parameters of semiconductor structures of field-effect transistors with a Schottky gate with an operating frequency range of 1.5–8 GHz and integrated amplifiers with an operating frequency range of 0.4–6 GHz is studied. Laser radiation with 25 ns pulse duration, incident on the transistor crystal, creates a pulsed photocurrent. It is shown that the amplitude of the pulsed photocurrent is three times higher than the operating transistor current. The current-voltage characteristics of the field-effect transistor were measured in the mode of pulsed laser radiation. The amplitude dependence of the pulsed photocurrent in semiconductor structures on the power of laser radiation for various wavelengths of 1.06 µm and 0.53 µm is studied. It is shown that as a result of the action of pulsed laser radiation on semiconductor structures, a short disappearance of the amplification of the high-frequency signal at the amplifier output occurs.