Open AccessФизические основы формирования гетероваризонной структуры на основе кремния
Author(s) -
М.К. Бахадирханов,
С.Б. Исамов
Publication year - 2021
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/jtf.2021.11.51528.60-21
Subject(s) - silicon , materials science , radiation , absorption (acoustics) , absorption spectroscopy , crystal (programming language) , range (aeronautics) , optics , crystallography , optoelectronics , physics , chemistry , computer science , composite material , programming language
With the formation of binary unit cells based on the AII and BVI, AIII, and BV elements, a heterovarizonic structure was obtained in the near-surface region of silicon, without destroying the crystal structure, without surface states with a thickness of about 5 μm. The resulting heterovarizonic structure has special fundamental parameters that ensure the absorption of light in a wide range of the solar spectrum from UV to IR radiation with λ = 0.1-3 μm, i.e., it covers the entire solar spectrum.