Open AccessРадиационная стойкость источника субтерагерцового излучения из гетеродина на генераторе на диоде Ганна и умножителя на полупроводниковой сверхрешетке
Author(s) -
А.С. Иванов,
Д.Г. Павельев,
С.В. Оболенский,
Е.С. Оболенская
Publication year - 2021
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/jtf.2021.10.51362.133-21
Subject(s) - gunn diode , radiation , terahertz radiation , radiation resistance , optoelectronics , diode , irradiation , materials science , semiconductor , superlattice , optics , heterodyne (poetry) , physics , nuclear physics , acoustics
The radiation resistance to gamma irradiation of various dose levels (0.5 kGy, 2 kGy, 10 kGy) of a subterahertz radiation source from a heterodyne on a Gunn diode and a GaAs / AlAs semiconductor superlattice multiplier was estimated. A measuring chamber for studying the radiation resistance of Gunn diodes has been developed and manufactured. The dependence of the output power on the frequency of a sub-terahertz radiation source before and after irradiation was evaluated analytically.