Open AccessСравнение СТМ и АСМ измерений тонких пленок Mo с моделью Кардара-Паризи-Жанга
Author(s) -
Л.А. Фомин,
И.В. Маликов,
В.А. Березин,
А.Э. Рассадин,
А.Б. Логинов,
Б.А. Логинов
Publication year - 2021
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/jtf.2021.10.51358.130-21
Subject(s) - epitaxy , scanning tunneling microscope , sapphire , materials science , atomic force microscopy , plane (geometry) , microscopy , condensed matter physics , nanotechnology , optics , physics , geometry , mathematics , laser , layer (electronics)
The relief of thin Mo epitaxial films grown on the R-plane of sapphire has been studied by scanning tunneling microscopy and atomic force microscopy. The region of parameters of the model of the evolution of the surface relief of the Kardar-Parisi-Zhang films is found, in which it corresponds to the obtained experimental results.