Open AccessДиссипативное туннелирование электронов в вертикально связанных двойных асимметричных квантовых точках InAs/GaAs(001)
Author(s) -
М. Б. Семенов,
В. Д. Кревчик,
Д. О. Филатов,
A. V. Shorokhov,
А.П. Шкуринов,
I. A. Ozheredov,
P. V. Krevchik,
Y.H. Wang,
T.R. Li,
Anil Kumar Malik,
М. О. Марычев,
Н.В. Байдусь,
Ivan M. Semenov
Publication year - 2021
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/jtf.2021.10.51354.66-21
Subject(s) - photocurrent , photoexcitation , quantum tunnelling , photodiode , metalorganic vapour phase epitaxy , optoelectronics , materials science , quantum dot , photoelectric effect , condensed matter physics , electron , phonon , epitaxy , atomic physics , physics , nanotechnology , excited state , layer (electronics) , quantum mechanics
We report on the results of experimental studies of the photoelectric properties of a GaAs p-i-n photodiode with InAs/GaAs(001) double asymmetric quantum dots (DAQDs) grown by self-assembling in Metal Organic Vapor Phase Epitaxy (MOVPE) process. Three peaks were observed in the dependence of the photocurrent on the reverse bias measured at monochromatic photoexcitation of the DAQDs at the wavelength corresponding to the energy of interband optical transitions between the ground hole and electron states in the bigger QDs. These peaks were related to the tunneling of the photoexcited electrons between the QDs including the dissipative one (with emission and absorption of the optical phonons). The experimental results agree qualitatively with the theoretical field dependence of the 1D dissipative tunneling probability between the QDs.