Open AccessВозможности метода ВИМС для анализа профиля имплантированного водорода в кремнии и примесного состава структур "кремний на изоляторе"
Author(s) -
Н.Д. Абросимова,
М.Н. Дроздов,
С.В. Оболенский
Publication year - 2020
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/jtf.2020.11.49973.114-20
Subject(s) - homogeneity (statistics) , silicon , hydrogen , materials science , silicon on insulator , impurity , normalization (sociology) , analytical chemistry (journal) , sputtering , ion implantation , ion , chemistry , optoelectronics , nanotechnology , thin film , computer science , chromatography , organic chemistry , machine learning , sociology , anthropology
The paper deals with the theoretical and experimental study resultsof implanted hydrogen distribution in silicon and SiO2-Si structures for SOI created by hydrogen transfer technology. A measurement technique for the quantitative analysis of implanted hydrogen in silicon high concentrations by the SIMS method is proposed, including the hydrogen atoms concentration quantitative calibration and the analysis depth normalization from the sputtering time. The implanted hydrogen in silicon and SiSiO2 structures depth distribution studies results are presented. The impurity composition of the implanted structures was determined. The lateral homogeneity and temporary stability of the implanted structures were also controlled.