Open AccessИсследование резонансной активации резистивного переключения в пленках ZrO-=SUB=-2-=/SUB=-(Y) методом атомно-силовой микроскопии
Author(s) -
Д. О. Филатов,
Д. А. Антонов,
И. Н. Антонов,
М.А. Рябова,
О. Н. Горшков
Publication year - 2020
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/jtf.2020.11.49969.109-20
Subject(s) - materials science , ion , electric field , signal (programming language) , atomic force microscopy , dielectric , oxygen , low frequency , resistive touchscreen , voltage , condensed matter physics , optoelectronics , atomic physics , chemistry , nanotechnology , electrical engineering , physics , organic chemistry , engineering , quantum mechanics , astronomy , computer science , programming language
Local resistive switching in the contact of an atomic force microscope (AFM) probe to ZrO2(Y) films (including those with a Ta2O5 sublayer) on conducting substrates was studied. Switching was performed by triangular voltage pulses with the imposition of a high-frequency sinusoidal signal. The dependence of the difference in the current strength through the AFM probe in the low-and high-resistance States of dielectric films on the frequency of the high-frequency sinusoidal signal was observed at frequencies corresponding to the characteristic frequency of jumps of O2 ions - for oxygen vacancies in ZrO2 (Y) and Ta2O5 at 300K. The effect is associated with resonant activation of O2 ion migration along with oxygen vacancies by an external high-frequency electric field.