Open AccessРезистивное переключение в структурах металл-оксид-полупроводник с наноостровками GeSi на подложке кремния
Author(s) -
С.В. Тихов,
В.Г. Шенгуров,
С.А. Денисов,
И.Н. Антонов,
А.В. Круглов,
А.И. Белов,
Д.О. Филатов,
О.Н. Горшков,
А.Н. Михайлов
Publication year - 2020
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/jtf.2020.10.49808.300-19
Subject(s) - materials science , optoelectronics , electroforming , semiconductor , insulator (electricity) , electrode , space charge , dielectric , spreading resistance profiling , sputtering , depletion region , layer (electronics) , doping , thin film , nanotechnology , electron , chemistry , physics , quantum mechanics
The self-assembled GeSi nanoislands built into the semiconductor-insulator interface of the MOS-structures based on Si(001) with SiOx and ZrO2(Y) oxide layers deposited by magnetron sputtering have been shown to initiate bipolar resistive switching without preliminary electroforming. The current-voltage curves and electrical parameters of the MOS-structures in the high-resistance state and in the low-resistance state have been studied. A change in the built-in charge in the dielectric near the insulator-semiconductor interface during resistive switching is established and associated with the formation and destruction of conductive filaments. The light-stimulated resistive switching of MOS-structures with ZrO2(Y) layer from the high-resistance to the low-resistance state is observed, which is associated with an increase in the conductivity of the space-charge region in the Si substrate due to interband optical absorption in Si, which causes a voltage redistribution between Si and ZrO2(Y) layer. A difference in the shape of the small signal photo-voltage spectra of MOS-structures is found in the spectral region of intrinsic photosensitivity of Si in the high and low resistance states due to the leakage of photo-excited charge carriers from Si to the metal electrode through filaments.