Open AccessКвантовый выход кремниевого лавинного фотодиода в диапазоне длин волн 120-170 nm
Author(s) -
П.Н. Аруев,
В.П. Белик,
В.В. Забродский,
Е.М. Круглов,
А.В. Николаев,
В.И. Сахаров,
И.Т. Серенков,
В.В. Филимонов,
Е.В. Шерстнев
Publication year - 2020
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/jtf.2020.08.49552.44-20
Subject(s) - avalanche photodiode , photodiode , optoelectronics , wavelength , materials science , single photon avalanche diode , quantum yield , quantum efficiency , optics , avalanche diode , voltage , physics , breakdown voltage , detector , fluorescence , quantum mechanics
The external quantum yield of silicon avalanche photodiode in the wavelength range of 120-170 nm was performed. It was shown that the engineered avalanche photodiode has the external quantum yield of 24-150 electron/proton under reverse bias voltage of 230-345 V, respectively. The testing of worked out avalanche photodiode by means of pulse flash of 280 and 340 nm wavelength demonstrates the speed, corresponding to the bandwidth not less than 25 MHz.