Open AccessРаспыление поверхности кремния при низкоэнергетической высокодозовой имплантации ионами серебра
Author(s) -
В.В. Воробьев,
А.М. Рогов,
В.И. Нуждин,
В.Ф. Валеев,
А.Л. Степанов
Publication year - 2020
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/jtf.2020.07.49457.153-19
Subject(s) - sputtering , ion , materials science , analytical chemistry (journal) , layer (electronics) , ion implantation , ion beam , range (aeronautics) , atomic physics , chemistry , thin film , nanotechnology , physics , composite material , organic chemistry , chromatography
The results of the first practical observations of sputtering of a Si surface after implantation with Ag+ ions with an energy of 30 keV depending on the implantation dose D in the range from 2.5 • 10^16 to 1.5 • 10^17 ion/cm^2 at a fixed current density in the ion beam J = 8 μA/cm^2 are presented. And also with a variation of J = 2, 5, 8, 15, and 20 µA/cm^2 for a constant value D = 1.5 • 10^17 ion/cm^2. In the first case, a monotonic increase in the thickness of the sputtered layer to 50 nm is observed at maximum D, and the effective sputtering coefficient of the implanted Ag:PSi layer is 1.6. It was also established that the thickness of the sputtering layer increases with increasing J.