Open AccessЧисленное моделирование процесса получения мультикремния методом направленной кристаллизации
Author(s) -
С.А. Смирнов,
В.В. Калаев
Publication year - 2020
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/jtf.2020.07.49440.169-19
Subject(s) - crucible (geodemography) , dislocation , materials science , crystal (programming language) , thermal , silicon , heat transfer , mechanics , sensitivity (control systems) , crystal growth , computer simulation , square (algebra) , domain (mathematical analysis) , crystallography , geometry , composite material , thermodynamics , physics , metallurgy , chemistry , mathematics , computer science , mathematical analysis , engineering , computational chemistry , electronic engineering , programming language
Numerical simulation of silicon multi-crystal growth by directional solidification with a square crucible is considered. We validate the use of 2D geometry of the vertical cross section as a computational domain. The model describes melt hydrodynamics, global heat transfer, thermal stresses and the evolution of the dislocation density in the crystal. The sensitivity of the stresses and dislocation density in the Si crystal to the parameters of the Alexander-Haazen model is analyzed.