Open AccessЛокализация прохождения тока в термофотовольтаических преобразователях на основе двойных гетероструктур InAsSbP/InAs
Author(s) -
B. A. Matveev,
V. I. Ratushnyi,
А.Ю. Рыбальченко
Publication year - 2020
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/jtf.2020.05.49187.14-19
Subject(s) - materials science , photocurrent , optoelectronics , thermophotovoltaic , current crowding , heterojunction , substrate (aquarium) , current density , nanotechnology , physics , oceanography , geology , common emitter , quantum mechanics
The main electrical characteristics of thermophotovoltaic converters based on p-InAsSbP/n-InAs/n-InAsSbP double heterostructures with a fully or partially removed substrate in a flip-chip structure are investigated. The influence of the resistance of different parts of the structure on the spatial distribution of the current density in the active region is shown, and the conditions for obtaining the most efficient collection of photocurrent / minimum current crowding are determined.