Open AccessИсследование элементарных процессов МOC-гидридной эпитаксии наногетероструктур на основе арсенида галлия методом атомно-силовой микроскопии
Author(s) -
П.Б. Болдыревский,
Д.О. Филатов,
А.Д. Филатов,
И.А. Казанцева,
М.В. Ревин,
П.А. Юнин
Publication year - 2020
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/jtf.2020.05.49185.331-19
Subject(s) - epitaxy , materials science , heterojunction , layer (electronics) , gallium arsenide , hydride , gallium , relaxation (psychology) , condensed matter physics , optoelectronics , crystallography , chemistry , nanotechnology , metal , metallurgy , psychology , social psychology , physics
Using atomic force microscopy, we studied the elementary processes of growing (Al, Ga, In) As heterostructures on misoriented GaAs (001) substrates by the method of MOC hydride epitaxy under reduced pressure. It was established that the growth of the epitaxial layers of GaAs and AlGaAs occurs according to a layered mechanism with the formation of macrosteps. The growth of pseudomorphic InGaAs / GaAs (001) layers also occurs by a layered mechanism with the formation of macrosteps. However, if the thickness of the pseudomorphic InxGa1-xAs / GaAs (001) layer exceeds a certain critical value depending on the molar fraction of InAs in the composition of the solid solution (x), the formation of growth defects in the form of three-dimensional islands, the density of which increases with increasing thickness, is observed on the surface of the InGaAs layer InGaAs layer. The formation of three-dimensional InGaAs islands is associated with the relaxation of elastic stresses in the pseudomorphic InGaAs / GaAs (001) layer according to the Stranski-Krastanov mechanism. Keywords: gallium arsenide, AlGaAs, InGaAs, MOC hydride epitaxy, defect formation, Stranski-Krastanov mechanism.