Open AccessНеразрушающий контроль поверхности, слоев и концентрации носителей заряда в подложках и структурах SiC
Author(s) -
А.В. Марков,
М.Ф. Панов,
В.П. Растегаев,
Е.Н. Севостьянов,
В.В. Трушлякова
Publication year - 2019
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/jtf.2019.12.48484.435-18
Subject(s) - silicon carbide , materials science , epitaxy , scanning electron microscope , spectroscopy , infrared spectroscopy , ellipsometry , silicon , atomic force microscopy , layer (electronics) , analytical chemistry (journal) , optoelectronics , nanotechnology , thin film , chemistry , composite material , physics , organic chemistry , quantum mechanics , chromatography
Silicon carbide substrates and epitaxial structures are investigated by nondestructive contactless methods. Parameters of the disrupted surface layer and roughnesses are determined using ellipsometry and atomic force microscopy. The free charge carrier concentration is determined by IR spectroscopy. The thicknesses in the multilayer epitaxial structure on SiC are determined using IR spectroscopy and scanning electron microscopy.