Open AccessЭлектронные и оптические свойства тонких пленок GaAlAs/GaAs
Author(s) -
Б. Е. Умирзаков,
S. B. Donaev,
N. M. Mustafaeva
Publication year - 2019
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/jtf.2019.10.48177.2475
Subject(s) - photoelectric effect , electron , secondary electrons , yield (engineering) , materials science , optoelectronics , condensed matter physics , chemistry , physics , nuclear physics , composite material
It is shown that the formation of GaAlAs nanofilms on the GaAs surface leads to an increase in the value of the emission coefficient of true secondary electrons and of the quantum yield of photoelectrons, which is explained by the difference in the depth of the exit zone of true secondary electrons for GaAs and GaAlAs.