Open AccessСравнительный анализ характеристик термофотовольтаических преобразователей на основе структур p-InAsSbP/n-InAs, облучаемых со стороны p- и n-типа проводимости
Author(s) -
B. A. Matveev,
V. I. Ratushnyi,
А.Ю. Рыбальченко
Publication year - 2019
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/jtf.2019.08.47897.355-18
Subject(s) - thermophotovoltaic , materials science , heterojunction , substrate (aquarium) , radiation , optoelectronics , irradiation , layer (electronics) , nanotechnology , optics , physics , common emitter , oceanography , nuclear physics , geology
The basic characteristics of thermophotovoltaic converters based on p-InAsSbP/n-InAs heterostructures with a limited area contact to the p-InAsSbP irradiated layer and a flip chip with radiation input through the contact-free surface of the n+-InAs substrate were simulated. The influence of design features on the temperature of the active region and on the efficiency of the converter is shown.