Open AccessМеханизмы токопереноса и резистивного переключения в конденсаторах со слоями стабилизированного иттрием диоксида гафния
Author(s) -
С.В. Тихов,
О.Н. Горшков,
А.И. Белов,
И.Н. Антонов,
А.И. Морозов,
М.Н. Коряжкина,
А.Н. Михайлов
Publication year - 2019
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/jtf.2019.06.47642.354-18
Subject(s) - electroforming , materials science , capacitor , optoelectronics , ion , resistive touchscreen , hafnia , reproducibility , voltage , analytical chemistry (journal) , electrical engineering , chemistry , nanotechnology , composite material , ceramic , cubic zirconia , engineering , organic chemistry , layer (electronics) , chromatography
The peculiarities of resistive switching in capacitors with yttria-stabilized hafnia layers were studied. The characteristics of current transport in the initial state and after electroforming and resistive switching at different temperatures were examined. The parameters of a small-signal equivalent circuit of a capacitor were determined for switching into low- and high-resistance states. These parameters suggest that the resistance of filaments changes after each successive switching. This provides an opportunity to use such measurements to determine the nature of resistive switching and verify the reproducibility of its parameters. The contribution of electron traps to switching was revealed. Ion migration polarization was observed at temperatures above 500 K, and the activation energy of ion migration and the ion concentration were determined. The effect of resistive switching under the influence of temperature was observed and interpreted for the first time.