Open AccessЭлектронные и оптические свойства нанопленок NiSi-=SUB=-2-=/SUB=-/Si
Author(s) -
Б. Е. Умирзаков,
Д. А. Ташмухамедова,
A. K. Tashatov,
Н.М. Мустафоева
Publication year - 2019
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/jtf.2019.05.47481.192-18
Subject(s) - fabrication , annealing (glass) , materials science , ion implantation , optoelectronics , ion , nanotechnology , composite material , chemistry , medicine , alternative medicine , organic chemistry , pathology
Optimum conditions for ion implantation and subsequent annealing for the fabrication of NiSi_2/Si (111) nanofilms with a thickness of 3.0–6.0 nm are determined. It is demonstrated that the energy-band parameters and optical properties typical of thick NiSi_2 films start to set in at d = 5.0–6.0 nm.