Open AccessМеханизмы токопрохождения в полупроводниковой структуре фотоэлектрического преобразователя с n-=SUP=-+-=/SUP=--p-переходом и антиотражающей пленкой пористого кремния, сформированной методом окрашивающего травления
Author(s) -
В.В. Трегулов,
В.Г. Литвинов,
А.В. Ермачихин
Publication year - 2019
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/jtf.2019.05.47477.237-18
Subject(s) - photoelectric effect , etching (microfabrication) , porous silicon , anode , silicon , materials science , analytical chemistry (journal) , p–n junction , current (fluid) , electrochemistry , biasing , optoelectronics , activation energy , atmospheric temperature range , voltage , chemistry , electrode , nanotechnology , semiconductor , electrical engineering , physics , engineering , layer (electronics) , chromatography , meteorology
We have studied experimental samples of photoelectric transducers with an n ^+– p junction based on a silicon single crystal and an antireflection porous silicon (por-Si) film formed by color chemical etching in a HF : KMnO_4 : C_2H_5OH etcher. It is shown that for KMnO_4 oxidant concentrations of 0.025 and 0.040 M, the por-Si film growth time at which the maximal efficiency of the photoelectric transducer is reached can be substantially increased as compared to that attained using anode electrochemical etching. For investigating the current transmission mechanisms, we have measured the temperature dependence of forward- and backward-bias current–voltage branches. The existence of several current transmission mechanisms has been established. It is found that traps with activation energy distributed in a continuous range of values considerably affect the current transmission.