Open AccessИнверсия типа проводимости тонких пленок n-InSe под действием лазерного излучения
Author(s) -
А.Г. Кязым-заде,
В.М. Салманов,
А.Г. Гусейнов,
Р.М. Мамедов,
З.А. Агамалиев,
А.А. Салманова,
Ф.М. Ахмедова
Publication year - 2019
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/jtf.2019.04.47319.110-18
Subject(s) - irradiation , indium , selenide , thin film , materials science , laser , conductivity , inversion (geology) , optoelectronics , analytical chemistry (journal) , optics , chemistry , nanotechnology , physics , metallurgy , geology , paleontology , selenium , chromatography , structural basin , nuclear physics
Conductivity inversion in thin n -InSe films under intense pulsed laser irradiation was obser. A p – n structure based on indium selenide formed between irradiated and nonirradiated regions of a thin-film sample. It was confirmed by EDAX analysis that the composition of the sample remained the same after irradiation. The conductivity inversion is attributed to a change in the dynamics of lattice defects under heating.