Open AccessЧисленное и экспериментальное исследования оптимизированного p-SOS-диода
Author(s) -
А.Г. Люблинский,
Е.И. Белякова,
И.В. Грехов
Publication year - 2019
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/jtf.2019.03.47177.208-18
Subject(s) - diode , voltage , materials science , amplitude , electric field , pulse (music) , current density , diffusion , current (fluid) , plasma , breakdown voltage , reduction (mathematics) , diffusion current , semiconductor , optoelectronics , atomic physics , electrical engineering , physics , optics , engineering , mathematics , thermodynamics , geometry , quantum mechanics
We report on the results of experimental investigation and numerical simulation of switching of SOS diode with p ^+ P _0 n ^+ structure and with reduced thickness of P _0-base. The proposed 1D diffusion-drift model of electron–hole plasma dynamics is found to be in good agreement with the experiment. The reduction of the P _0-base thickness has allowed us to double the output pulse voltage with the same switching current density. This has been reached by a considerable reduction of switching losses as well as due to the formation of the domain of a strong quasi-rectangular electric field at the P _0 n ^+ junction during the current interruption. As a result, output pulse amplitude considerably exceeds the static breakdown voltage of P _0 n ^+ junction. This effect has been observed for the first time for high-voltage semiconductor opening switches.