Open AccessМорфология и электронные свойства наноразмерных структур Si, созданных на поверхности CaF-=SUB=-2-=/SUB=-
Author(s) -
Б. Е. Умирзаков,
Р. Х. Ашуров,
S. B. Donaev
Publication year - 2019
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/jtf.2019.02.47081.185-18
Subject(s) - nanocrystalline material , materials science , band gap , nanoscopic scale , morphology (biology) , nanotechnology , optoelectronics , crystallography , geology , chemistry , paleontology
The surface morphology, crystal structures, and band-energy parameters have been studied for nanofilms and regularly arranged nanoscale Si phases with a thickness of 1–2 nm. The bandgap thickness of nanocrystalline Si phases with 2–3 single layers is found to be ~1.4 eV.