Open AccessПоверхностный тепловой интерфейс для мощных арсенид-галлиевых гетероструктурных полевых транзисторов
Author(s) -
А.Б. Пашковский,
И.В. Куликова,
В.Г. Лапин,
В.М. Лукашин,
Н.К. Приступчик,
Л.В. Манченко,
В.Г. Калина,
М.И. Лопин,
А.Д. Закурдаев
Publication year - 2019
Publication title -
žurnal tehničeskoj fiziki
Language(s) - English
Resource type - Journals
eISSN - 1726-748X
pISSN - 0044-4642
DOI - 10.21883/jtf.2019.02.47079.2493
Subject(s) - overheating (electricity) , materials science , thermal resistance , optoelectronics , transistor , gallium arsenide , thermal conductivity , coating , dielectric , power semiconductor device , thermal , engineering physics , electrical engineering , composite material , engineering , voltage , physics , meteorology
Application of heat-conducting coatings for cooling of high-power FETs based on heterostructures with arsenide–gallium substrate is theoretically analyzed. When the basic technology for manufacturing of transistors is employed in the absence of additional efforts aimed at a decrease in the thermal resistance of the substrate, the application of an additional thermal interface that represents a heat-conducting dielectric coating makes it possible to substantially decrease the overheating of the transistor channel. A several-fold decrease in such overheating can be reached using variations in the thickness of the coating and modification of the transistor structure and working regimes.