Open AccessРадиационная стойкость кремниевых солнечных элементов, легированных никелем
Author(s) -
К.А. Исмайлов,
З.Т. Кенжаев,
С.В. Ковешников,
Е.Ж. Косбергенов,
Б.К. Исмайлов
Publication year - 2022
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2022.05.52330.253
Subject(s) - radiation resistance , silicon , nickel , materials science , impurity , radiation , doping , irradiation , spreading resistance profiling , diffusion , radiochemistry , atomic physics , optoelectronics , chemistry , metallurgy , optics , physics , thermodynamics , nuclear physics , organic chemistry
The influence of nickel doping on the radiation resistance of silicon solar cells in the range of γ-irradiation doses of 10^5–10^8 rad was studied. It is shown that diffusion doping of silicon with impurity nickel atoms increases the radiation resistance of the parameters of silicon solar cells. It is assumed that the reason for the increase in the radiation resistance of such solar cells is the existence of clusters of impurity nickel atoms, which serve as sinks for radiation defects.