Open AccessЗависимость подвижности носителей заряда в гибридных наноструктурах на интерфейсе графена с молекулярными ионами от их зарядовой плотности
Author(s) -
А.В. Бутко,
В.Ю. Бутко,
Ю.А. Кумзеров
Publication year - 2021
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2021.11.51603.141
Subject(s) - graphene , materials science , nanostructure , charge carrier , nanotechnology , ion , electron mobility , transistor , field effect transistor , chemical physics , molecular dynamics , optoelectronics , voltage , chemistry , physics , computational chemistry , organic chemistry , quantum mechanics
A.V. Butko, V.Y. Butko, Y.A.KumzerovIoffe Institute, 194021, St. Petersburg, RussiaHybrid nanostructures with large interface between nanostructural elements play an important role in the modern electronics. Among these nanostructures are hybrid nanostructures formed at the interface of graphene with ensembles of molecular ions in the solution gated Graphene Field Effect Transistors (GFETs) that are promising for chemical and biological sensor fabrication. Therefore investigation of interfacial effects in electrical transport in these systems is interesting. This work is a theoretical study of dependence of the charge carrier mobility (µ) in these nanostructures on density of the interfacial molecular ions (Nii). We show that dependence µ~1/(Nii)^1/2 obtained in free charge carrier model with short range scattering in case of the weak interaction between the charge carriers and the interfacial ions is in agreement with experimental transistor characteristics obtained at the high gate voltages.