Open AccessВлияние сжимающих и растягивающих напряжений на электронную структуру фосфорена
Author(s) -
А.В. Кривошеева,
В.Л. Шапошников,
Ivan Štich
Publication year - 2021
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2021.10.51458.110
Subject(s) - phosphorene , semiconductor , materials science , semiconductor materials , charge carrier , band gap , lattice (music) , optoelectronics , nanotechnology , condensed matter physics , physics , acoustics
A new promising semiconductor material - phosphorene - was investigated and the possibilities of modifying of its interband transitions under compressive and tensile strains in the crystal lattice of the material were determined by means of theoretical modeling. It is shown that depending on the value and direction of the strains this material may be direct-gap or indirect-gap semiconductor. The potential for the use of phosphorene in nanoelectronic devices of new generation with controlled transport of charge carriers is shown.