Open AccessЭлектронная структура термически окисленного вольфрама
Author(s) -
П.А. Дементьев,
Е.В. Дементьева,
М.Н. Лапушкин,
Д. А. Смирнов,
С.Н. Тимошнев
Publication year - 2021
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2021.08.51173.065
Subject(s) - tungsten , x ray photoelectron spectroscopy , analytical chemistry (journal) , torr , materials science , valence (chemistry) , oxidation state , oxygen , photoemission spectroscopy , chemical state , chemistry , metal , metallurgy , nuclear magnetic resonance , physics , organic chemistry , chromatography , thermodynamics
Using the method of photoelectron spectroscopy, an in situ study in ultrahigh vacuum of the electronic structure of a clean surface of tungsten oxidized at an oxygen pressure of 1 Torr and temperature of 1000 K was carried out. The spectra of photoemission from the valence band and core levels O 1s, O 2s, W 4f under synchrotron excitation in the photon energy range 80 600 eV are studied. It was found that a semiconductor film of tungsten oxide is formed, which contains various tungsten oxides with an oxidation state of 6+ to 4+. On the surface, mainly tungsten oxides with an oxidation state of 6+ are formed, the proportion of which gradually decreases with distance from the surface with an increase in tungsten oxides with an oxidation state of 4+.