Open AccessРелаксация напряжений несоответствия в гетероструктурах alpha-Ga-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=-/alpha-Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- при образовании дислокаций несоответствия
Author(s) -
А.М. Смирнов,
А.В. Кремлева,
Sh. Sh. Sharofidinov,
В.Е. Бугров,
А.Е. Романов
Publication year - 2021
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2021.06.50941.029
Subject(s) - heterojunction , nucleation , materials science , condensed matter physics , anisotropy , crystal (programming language) , slip (aerodynamics) , relaxation (psychology) , polar , crystallography , stress relaxation , optics , composite material , physics , optoelectronics , chemistry , thermodynamics , psychology , social psychology , astronomy , computer science , programming language , creep
We propose the analytical models describing misfit stress relaxation in α-Ga2O3/α-Al2O3 film/substrate heterostructures taking into account the crystal lattices anisotropy of the heterostructure materials. We consider the nucleation of misfit dislocations as a result of basal or prismatic slip in α-Ga2O3/α-Al2O3 heterostructures with various film orientations. We calculate and analyze the dependences of the critical thickness hc (film thickness above which the nucleation of misfit dislocations is favorable) on the angle ϑ between the polar c-axis and the normal to the film growth plane for α-Ga2O3/α-Al2O3 heterostructures. We demonstrate that accounting for elastic constant C14 is not critical in the considered relaxation models for the α Ga2O3/α Al2O3 heterostructures.