Open AccessЭПР и люминесценция пористого кремния
Author(s) -
Н.Е. Демидова,
Е.С. Демидов,
В.В. Карзанов
Publication year - 2021
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2021.03.50588.228
Subject(s) - annealing (glass) , photoluminescence , silicon , quantum tunnelling , materials science , porous silicon , condensed matter physics , physics , optoelectronics , composite material
There are presented research data of ESR, photoluminescence (PL) and carrent transport in porous silicon (PS) on KDB-0.3 and KES-0.01 Si, oxidized by10 minute isochronous thermal annealing on air at temperatures Tann from 20°С to 900°С and also in HNO3 for the purpose of the further clearing of Pb - centres nature of no radiating recombination. Maximum quantum yield of PL was observed at chemical oxidation of the PS on silicon of KDB-0.3 mark.. Anticorrelation of PL and ESR intensities of Pb - centres in the range of Tann = (20-300) °С takes a place. . Nonmonotonic dependence of ESR intensity of Pb - centres vs Tann with a minimum nearby 700°С is found out. Weak PL in PS with Tann nearby 700°С at minimum of ESR of Pb - centres means occurrence with annealing of other no radiating recombination centres. Falling of conductivity of PS with growth of Tann is connected with disintegration of Si fibres in Ps on small granules through which there is a discrete tunneling of current carriers.