Open AccessЭкситон-фононное стимулированное излучение в кристаллической пленке ZnO при комнатной температуре
Author(s) -
Н.Н. Васильев,
E. N. Borisov,
B. V. Novikov
Publication year - 2020
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2020.10.49904.098
Subject(s) - luminescence , exciton , materials science , sapphire , molecular beam epitaxy , epitaxy , excitation , substrate (aquarium) , optoelectronics , zinc , atomic physics , optics , condensed matter physics , physics , laser , layer (electronics) , nanotechnology , oceanography , quantum mechanics , geology , metallurgy
The near-edge luminescence of zinc oxide epitaxial film grown by molecular-beam epitaxy on a sapphire substrate was studied. Under an optical excitation increase at room temperature, the luminescence spectrum changes radically and a new band appears with a maximum of ~ 3.17 eV. It has features of stimulated emission i.e. a threshold of nonlinear growth and narrowing of the half-width. Using the model of a one-dimensional amplifier and experimental data, the gain spectrum was calculated, with maximal value being 170 cm– 1. The analysis of theoretical approaches for calculating the Mott concentration is carried out. For the first time it is shown that nearby the threshold intensity the observed stimulated emission is originated from the second phonon replica of the exciton.