Open AccessУправление сверхпроводящими переходами нанопроводов с использованием затворов без гальванической связи для создания электронных устройств на основе сверхпроводников
Author(s) -
Б.А. Гурович,
К.Е. Приходько,
Л.В. Кутузов,
Б.В. Гончаров
Publication year - 2020
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2020.09.49764.23h
Subject(s) - nanowire , materials science , inverter , resistor , optoelectronics , ion , current (fluid) , nanotechnology , power (physics) , electrical engineering , physics , voltage , engineering , quantum mechanics
The paper shows the possibility of switching a nanowire from NbN from the superconducting state to the normal state in a non-contact way by passing current through a gate that is placed at a certain distance from the nanowire. The gate is separated from the nanowire by an Al2O3 layer and contains integrated resistor formed under ion irradiation. It were experimentally found the dependences of the minimum power released at the gate, sufficient to transfer the nanowire to its normal state, depending on the value of the direct current through the nanowire. Based on this principle, a signal inverter has been created that contains three consecutive stages, which shows the potential use of this technique for forming the elemental logical base of a cryogenic computer.