Open AccessПараметры туннельного барьера сверхпроводниковых структур на основе ниобия
Author(s) -
М.Е. Парамонов,
Л.В. Филиппенко,
П.Н. Дмитриев,
М.Ю. Фоминский,
А.Б. Ермаков,
В.П. Кошелец
Publication year - 2020
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2020.09.49755.31h
Subject(s) - quantum tunnelling , electrical resistivity and conductivity , condensed matter physics , materials science , barrier layer , current density , physics , layer (electronics) , nanotechnology , quantum mechanics
The main parameters of the tunneling barrier of the Josephson junctions Nb/AlO x /Nb and Nb/AlN/Nb were estimated using the Simmons method in a wide range of current densities. The dependences of the height and width of the tunnel barrier on the resistivity for each type of junctions are experimentally determined. A decrease in the height of the AlN tunnel barrier by 0.3 eV, compared with the oxide one, makes it possible to obtain junctions with a current density above 15 kA/cm 2 at a technologically achievable insulation layer of the order of 10 Angstroms, which makes it possible to realize the quality parameter R j /R n not lower than 25.