Open AccessНаноструктуры AlN и GaN: аналитические оценки характеристик электронного спектра
Author(s) -
С.Ю. Давыдов
Publication year - 2020
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2020.06.49357.007
Subject(s) - zigzag , silicon carbide , materials science , substrate (aquarium) , silicon , wide bandgap semiconductor , condensed matter physics , band gap , optoelectronics , composite material , geometry , physics , mathematics , oceanography , geology
For AlN and GaN infinite flat sheets, free and decorated nanoribbons with the zigzag-type edges and linear chains the analytical expressions for the band-gap widths, characteristic velocities and effective masses are obtained. Numerical results are compared with the values of the corresponding characteristics calculated within the same models for the silicon carbide and carbon nanostructures. The role of substrate is also briefly discussed.