Open AccessВариация состояния поверхности в ходе сканирования в низковольтном РЭМ и ее влияние на размеры рельефной структуры
Author(s) -
Ю.В. Ларионов,
Ю.В. Озерин
Publication year - 2020
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2020.06.49356.608
Subject(s) - laser linewidth , limiting , silicon , scanning electron microscope , materials science , analytical chemistry (journal) , physics , chemistry , optics , composite material , optoelectronics , engineering , mechanical engineering , laser , chromatography
The emission variation of SSE from surface fragments of protrusions in a silicon plate is evaluated during prolonged scanning in low energy SEM. Emission dynamic variation that is especially complex near the edges of protrusion upper bases and slopes is discovered that affects the sizes of all protrusion fragments. Emission variation is explained with changes of unevenly localized charge state at different surface fragments of protrusions in a natural silica and a contamination film. Contamination is occurred in vacuum and depends on a surface charge state so it is not uniform along protrusion surface. The total absence of contamination on some protrusions is fixed so its initial linewidth size is occurred a constant during a scanning. The limiting uprising of a linewidth size to 4.5 at a one case and the limiting decrease to -0.8 at another case are fixed.Yu. V. Larionov,Senior Researcher, A.M. Prokhorov General Physics Institute, RAS, Moscow, 119991, Russian Federation, E-mail: luv@kapella.gpi.ru,Yu. V. Ozerin,Leading Engineer, yozerin@mikron.ru Mikron Co., Zelenograd, Russia