Open AccessВлияние высокого давления на электрические и гальваномагнитные свойства композита Cd-=SUB=-3-=/SUB=-As-=SUB=-2-=/SUB=--20mol.% MnAs
Author(s) -
L. A. Saipulaeva,
M. M. Gadzhialiev,
А. Г. Алибеков,
N. V. Melnikova,
В. С. Захвалинский,
A. I. Ril,
С. Ф. Маренкин,
А. Н. Бабушкин
Publication year - 2020
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2020.06.49333.32m
Subject(s) - magnetoresistance , condensed matter physics , materials science , hall effect , electrical resistivity and conductivity , phase (matter) , charge carrier , chemistry , magnetic field , electrical engineering , physics , engineering , organic chemistry , quantum mechanics
The pressure dependences of electrical resistance, Hall coefficient, charge carrier mobilities, and magnetoresistance of the Cd_3As_2–20 mol % MnAs composite are investigated at pressures up to 9 GPa. The pressure dependences of all the listed properties exhibit features related to phase transitions. The presence of pressure-induced negative magnetoresistance is registered.