Open AccessОсобенности теплопереноса в гетероструктурах Al-=SUB=-x-=/SUB=-Ga-=SUB=-1-x-=/SUB=-N/GaN на сапфире
Author(s) -
D. A. Chernodubov,
И. О. Майборода,
М. Л. Занавескин,
А.В. Инюшкин
Publication year - 2020
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2020.04.49154.628
Subject(s) - thermal conductivity , sapphire , materials science , molecular beam epitaxy , heterojunction , thin film , thermal , crystal (programming language) , conductivity , epitaxy , optoelectronics , analytical chemistry (journal) , optics , composite material , chemistry , nanotechnology , thermodynamics , layer (electronics) , laser , physics , chromatography , computer science , programming language
Thermal conductivity of thin layers of AlxGa1-xN/GaN (0.05≤ x≤1) heterostructures on sapphire grown with molecular beam epitaxy has been measured. Thermal conductivity values of AlxGa1-xN и GaN thin films at room temperature have been obtained. Concentration dependence of thermal conductivity has been analyzed with the virtual crystal thermal conductivity model. Thermal transport in the structure considering local heating has been simulated numerically in order to find optimal structure layers` thicknesses allowing high thermal conductivity value.