Open AccessВлияние структурных свойств на электросопротивление тонких пленок Al/Ag в процессе твердофазной реакции
Author(s) -
Roman R. Altunin,
Evgeny T. Moiseenko,
С. М. Жарков
Publication year - 2020
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2020.04.49130.652
Subject(s) - intermetallic , aluminium , materials science , electrical resistivity and conductivity , thin film , solid state , phase (matter) , diffraction , electron diffraction , solid solution , analytical chemistry (journal) , metallurgy , chemical engineering , crystallography , chemistry , nanotechnology , organic chemistry , alloy , physics , engineering , optics , quantum mechanics
Based on the study of a solid-state reaction process in Al/Ag thin films (the atomic ratio being Al:Ag=1:3) carried out by in situ electron diffraction method and electrical resistivity measurements, the reaction initiation temperature has been determined and a model of structural phase transitions occurring during the solid-state reaction has been proposed. The solid-state reaction begins at 70°C with the formation of an Al-Ag solid solution at the interface of aluminum and silver nanolayers. It has been found that in the reaction process intermetallic compounds γ-Ag2Al => µ-Ag3Al are successively formed. It has been established that for the formation of the µ-Ag3Al phase in thin films (up to 100 nm) the following is necessary: first, significant excess of silver over aluminum in the atomic composition, second, the formation of the µ-Ag3Al phase begins only after all the FCC aluminum has reacted.The work was supported by the Russian Science Foundation (grant #18-13-00080).