Open AccessСоздание и исследования структур металл-диэлектрик--полупроводник на основе сегнетоэлектрических пленок
Author(s) -
M.C. Афанасьев,
Д.А. Киселев,
C.A. Левашов,
A.A. Сивов,
Г.В. Чучева
Publication year - 2020
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2020.03.49008.611
Subject(s) - materials science , dielectric , ferroelectricity , piezoelectricity , microstructure , capacitance , silicon , semiconductor , optoelectronics , composite material , electrode , chemistry
The effect of the synthesis temperature on the microstructure and the electrophysical properties of metal–dielectric–semiconductor structures based on ferroelectric films of the composition Ba_0.8Sr_0.2TiO_3 upon the formation of p -type silicon substrates with [100] orientation is studied. It was experimentally established that an increase in the synthesis temperature leads to an improvement in the dielectric and piezoelectric properties of ferroelectric films. The temperature stability and stability in the behavior of the capacitance–voltage characteristics of MIS structures on the number of switching cycles are shown.