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Сверхпроводимость в тонких пленках дираковского полуметалла Cd-=SUB=-3-=/SUB=-As-=SUB=-2-=/SUB=-
Author(s) -
А.Б. Давыдов,
Л.Н. Овешников,
Alexey Suslov,
А.И. Риль,
С.Ф. Маренкин,
Б.А. Аронзон
Publication year - 2020
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2020.03.48998.617
Subject(s) - materials science , condensed matter physics , evaporation , electrical resistance and conductance , superconductivity , vacuum evaporation , gallium arsenide , magnetic field , thin film , transition temperature , nanotechnology , optoelectronics , composite material , physics , thermodynamics , quantum mechanics
We studied thin films of the Dirac semi-metal Cd3As2, about 100 nm thickness, made by vacuum thermal evaporation from cadmium arsenide single crystals. The temperature and magnetic field dependences of the electrical resistance were measured, which indicate the presence of a superconducting transition at a temperature between 0.2 to 0.6 K.

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