Адсорбция атомов Ga и Cl и молекулы GaCl на карбиде кремния: модельный подход

Within the scope of the Haldane – Anderson model metallic and ionic contri-butions to the adsorption energy are calculated for the Ga and Cl atoms ad-sorbed on the C- and Si-faces of p- and n-SiC substrates. It is shown firstly that for all considered cases we obtain that ionic contribution is greater than metallic contribution. Secondly, in the case of adsorption on the p-SiC sub-strate value of the model of adsorption energy for Ga is greater than for Cl while in the case of adsorption on the n-SiC opposite inequality is realized. For the description of the GaCl adsorption on SiC substrate simple ionic model is put forward. Comparison with the results of other authors demonstrates valid-ity of the proposed models.