Open AccessДиэлектрические потери тонкопленочных образцов SiO-=SUB=-2-=/SUB=- на Al в THz-IR-диапазоне
Author(s) -
G. A. Komandin,
V. S. Nozdrin,
A. A. Pronin,
O. E. Porodinkov,
V. B. Anzin,
I. E. Spektor
Publication year - 2020
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2020.02.48871.584
Subject(s) - microelectronics , terahertz radiation , dielectric , materials science , optoelectronics , substrate (aquarium) , quartz , thin film , resonance (particle physics) , spectroscopy , fused quartz , electronic circuit , nanotechnology , electrical engineering , composite material , physics , oceanography , engineering , particle physics , quantum mechanics , geology
Creation of new dielectric materials for insulating layers of interconnects with low losses at high frequencies (low-k) is one of the main directions of modern microelectronics. Currently, various modifications of standard for modern integrated circuits dielectric structures based on SiO2, differing in composition and morphological characteristics, are being investigated. In this paper, the dielectric losses of thin-film SiO2 samples on an Al substrate are studied by terahertz (THz) and IR spectroscopy. Significant differences in the spectra of such structures in comparison with bulk samples of fused quartz, including berriman resonance modes, were found.