Open AccessЭлектропроводность структур металл--диэлектрик--полупродник на основе сегнетоэлектрических пленок
Author(s) -
М.С. Афанасьев,
Е.И. Гольдман,
Г.В. Чучева,
А.Э. Набиев,
Дж.И. Гусейнов,
Н.Ш. Алиев
Publication year - 2020
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2020.01.48748.570
Subject(s) - condensed matter physics , dielectric , materials science , conductivity , semiconductor , electrical resistivity and conductivity , range (aeronautics) , ferroelectricity , atmospheric temperature range , physics , thermodynamics , optoelectronics , quantum mechanics , composite material
In this paper, we present the results of experimental studies of the frequency and temperature dependences of the electrical conductivity of metal–dielectric–semiconductor structures based on ferroelectric films of the Ba_0.8Sr_0.2TiO_3 composition. In the temperature range of 290–400 K and the frequency range of 25–10^6 Hz, the conductivity was found to obey the σ ∝ f ^0.76 law, which is characteristic of the hopping mechanism of charge transfer over states localized near the Fermi level. The density of these states, average distance and time of jumps are estimated.