Open AccessВлияние упругих напряжений на формирование осевых гетеропереходов в трехкомпонентных нитевидных нанокристаллах A-=SUP=-III-=/SUP=-B-=SUP=-V-=/SUP=-
Author(s) -
А.А. Корякин,
Egor D. Leshchenko,
В.Г. Дубровский
Publication year - 2019
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2019.12.48574.31ks
Subject(s) - nanowire , heterojunction , materials science , ternary operation , radius , monolayer , spinodal decomposition , condensed matter physics , superlattice , relaxation (psychology) , x ray absorption spectroscopy , optoelectronics , nanotechnology , chemistry , phase (matter) , optics , absorption spectroscopy , physics , psychology , social psychology , computer security , organic chemistry , computer science , programming language
The influence of elastic stresses on the formation of axial heterojunctions in ternary III-V nanowires was theoretically investigated. The composition profiles of InAs/GaAs axial heterojunction in self-catalyzed GaxIn1-xAs nanowires were obtained. It was shown that the InAs/GaAs heterojunction width amounts to tens of monolayers and increases with the increase of the nanowire radius due to elastic stresses. The elastic stress relaxation on nanowire sidewalls does not lead to the presence of miscibility gap in GaxIn1-xAs system at typical growth temperature (about 450ºC) and nanowire radius above 5 nm.