Open AccessДислокационные реакции в полуполярном слое GaN, выращенном на вицинальной подложке Si(001) с использованием буферных слоев AlN и 3C-SiC
Author(s) -
L. M. Sorokin,
M.Ю. Гуткин,
А.В. Мясоедов,
A. E. Kalmykov,
В. Н. Бессолов,
С. А. Кукушкін
Publication year - 2019
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2019.12.48543.35ks
Subject(s) - dislocation , burgers vector , materials science , transmission electron microscopy , epitaxy , condensed matter physics , crystallography , relaxation (psychology) , core (optical fiber) , activation energy , tension (geology) , layer (electronics) , chemistry , nanotechnology , composite material , physics , psychology , social psychology , ultimate tensile strength
The interaction between a+c-type and a-type dislocations in thick (up to 14 µm) semipolar GaN layer grown by hydride vapor phase epitaxy on a 3C SiC/Si(001) template has been detailed investigated by means of transmission electron microscopy. It is shown, that the expansion of a dislocation half loop with Burgers vector b=1/3 during cooling process can be blocked by its reaction with a threading dislocation with b=1/3 to form a dislocation segment with b= . This dislocation reaction is discussed in terms of the energy relaxation. The approximation estimate made within the linear tension approach gives the total energy gain ~7.6 eV/Å (that is, in general, ~45.6 keV for the observed screw dislocation segment of length 600 nm formed as a result of the reaction). Using the core energy calculations, the dislocation core contribution was also estimated as ~19.1 keV.