Open AccessЭлектронографическое изучение структуры эпитаксиального графена, сформированного путем термического разложения SiC(0001) в атмосфере Ar и в высоком вакууме
Author(s) -
И.С. Котоусова,
С.П. Лебедев,
А.А. Лебедев,
П.В. Булат
Publication year - 2019
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2019.10.48280.434
Subject(s) - graphene , materials science , silicon carbide , electron diffraction , homogeneous , layer (electronics) , silicon , inert , chemical engineering , diffraction , nanotechnology , optoelectronics , composite material , optics , chemistry , physics , organic chemistry , engineering , thermodynamics
The structure of epitaxial graphene formed by thermal destruction of silicon carbide surface in the conditions of vacuum synthesis and in an Ar environment has been studied by reflection electron diffraction. As a result of the conducted study it is found the notably more homogeneous graphene coating of buffer layer on the SiC surface under the graphene formation on the polytypes 4H- и 6H- SiC(0001) surfaces in the inert environment as against the graphene synthesis in vacuum. The dependence of quality of the covering from degree of initial single crystal perfection is shown.