Open AccessИзучение микроструктуры кристаллов Si, подвергнутых облучению быстрыми Н-=SUP=-+-=/SUP=--ионами и термообработке, методами высокоразрешающей трехкристальной рентгеновской дифрактометрии и электронной просвечивающей микроскопии
Author(s) -
В.Е. Асадчиков,
И.Г. Дьячкова,
Д.А. Золотов,
Ф.Н. Чуховский,
Л.М. Сорокин
Publication year - 2019
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2019.10.48245.498
Subject(s) - transmission electron microscopy , proton , ion , wafer , materials science , silicon , christian ministry , crystallography , irradiation , crystal structure , range (aeronautics) , atomic physics , analytical chemistry (journal) , chemistry , nanotechnology , optoelectronics , nuclear physics , physics , philosophy , theology , organic chemistry , composite material , chromatography
The structural features of the formation of radiation defects in proton-implanted layers of silicon wafers during their heat treatment are studied. New data on the nature, characteristics and concentration of microdefects in Si crystals irradiated with protons with energies of 100+200+300 Kev, with a total dose of 2·1016 ion/cm2, and the evolution of the defective structure during heat treatment in a wide temperature range from 200 to 1100°C were obtained from the analysis of the results of studies by high-resolution three-crystal X-ray diffractometry and transmission electron microscopy.This work was supported by the Ministry of Science and Higher Education within the State assignment FSRC «Crystallography and Photonics» RAS.