Open AccessРеакция диэлектрических параметров пленок (110)SrTiO-=SUB=-3-=/SUB=- на формирование в их объеме сегнетоэлектрических доменов
Author(s) -
Ю.А. Бойков,
В. А. Данилов
Publication year - 2019
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2019.08.47973.450
Subject(s) - strontium titanate , dielectric , heterojunction , materials science , capacitor , layer (electronics) , evaporation , photolithography , etching (microfabrication) , optoelectronics , nanotechnology , voltage , electrical engineering , physics , thermodynamics , engineering
Three-layer SrRuO_3/SrTiO_3/SrRuO_3 heterostructures were grown by laser evaporation on (110)LaAlO_3 substrates. Photolithography and ion etching are used to form plane-parallel film capacitors, in which a layer of strontium titanate is placed between two film electrodes of strontium ruthenate. Data on the structure and orientation of the intermediate SrTiO_3 layer in the grown heterostructures were obtained. The variation of the dielectric constant and dielectric loss of the SrTiO_3 intermediate layer upon varying the temperature and intensity of an external electric field was studied.