Open AccessОб изменении реальной структуры кристаллов кремния, имплантированных ионами водорода, при их отжиге по данным трехкристальной рентгеновской дифрактометрии
Author(s) -
В.Е. Асадчиков,
И.Г. Дьячкова,
Д.А. Золотов,
Ф.Н. Чуховский,
Л.М. Сорокин
Publication year - 2019
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2019.08.47966.430
Subject(s) - diffraction , crystal (programming language) , materials science , maxima , annealing (glass) , ion , single crystal , silicon , hydrogen , ion implantation , radiation , crystallography , analytical chemistry (journal) , atomic physics , optics , chemistry , physics , optoelectronics , art , organic chemistry , chromatography , performance art , computer science , composite material , art history , programming language
In this paper, we present the results of a three-crystal X-ray diffractometry (XRD) study of the state of a disturbed layer formed in silicon crystals by implantation of hydrogen ions with energies of 100 + 200 + 300 keV and a total dose of 2 × 10^16 cm^–2 during the subsequent heat exposure in the temperature range from 200 to 1100°C. Here, X-ray studies were performed in the three-crystal XRD scheme when the sample under consideration operates as a second stationary crystal with various fixed angular detuning α from the Bragg position while the third (perfect) crystal-analyzer sweeps the angular distribution of radiation diffracted by the second crystal. Based on a comparison of the shape of diffraction and diffuse maxima for the samples under study, a qualitative conclusion about a significant transformation of radiation defects at post-implantation annealing was derived.