Open AccessК теории электронных состояний эпитаксиального бислоя графена
Author(s) -
Г.О. Абдуллаев,
З.З. Алисултанов
Publication year - 2019
Publication title -
fizika tverdogo tela
Language(s) - English
Resource type - Journals
eISSN - 1726-7498
pISSN - 0367-3294
DOI - 10.21883/ftt.2019.03.47260.289
Subject(s) - bilayer graphene , coulomb , bilayer , condensed matter physics , substrate (aquarium) , materials science , symmetry (geometry) , band gap , energy spectrum , charge (physics) , epitaxy , layer (electronics) , symmetry breaking , graphene , nanotechnology , chemistry , physics , quantum mechanics , mathematics , membrane , biochemistry , oceanography , geometry , geology , electron
The energy spectrum of an epitaxial graphene bilayer is investigated. The most general case of spontaneous breaking of the P symmetry within and between the layers is considered. The influence of the gate voltage on the energy spectrum is studied. It is shown that a general profile of this influence substantially depends on the ratio between bandgaps corresponding to different layers. At a certain value of the Coulomb potential caused by the transition of a charge from the substrate, the bandgap collapses. These studies are carried out for two types of layer packing in the bilayer, namely, the AB and AA packings.